Akinaga Hiroyuki

Affiliation and department：
Homepage URL (2)： http://www.researcherid.com/rid/L-8623-2016 , http://www.researcherid.com/rid/L-8623-2016

Research field (5)： Applied materials , Material fabrication and microstructure control , Nanomaterials , Electric/electronic material engineering , Electric/electronic material engineering

Research keywords (2)： AIdevice , Resistive Random Access Memory (ReRAM)

Papers (207)：

Yasuhisa Naitoh, Yosuke Tani, Emiko Koyama, Tohru Nakamura, Touru Sumiya, Takuji Ogawa, Guento Misawa, Hisashi Shima, Kota Sugawara, Hiroshi Suga, Hiroyuki Akinaga. Single-Molecular Bridging in Static Metal Nanogap Electrodes Using Migrations of Metal Atoms. The Journal of Physical Chemistry C. 2020. 124. 25. 14007-14015
M. Oshima, M. Shuzo, K. Ono, H. Fujioka, Y. Watanabe, S. Miyanishi, H. Akinaga. Initial stage of Schottky barrier formation of ferromagnetic MnSb(0001) films on GaAs(111)B. Applied Surface Science. 2020. 130-132. 892-898
Hiroshi Suga, Hiroya Suzuki, Kazuki Otsu, Takuya Abe, Yukiya Umeta, Kazuhito Tsukagoshi, Touru Sumiya, Hisashi Shima, Hiroyuki Akinaga, Yasuhisa Naitoh. Feedback Electromigration Assisted by Alternative Voltage Operation for the Fabrication of Facet-Edge Nanogap Electrodes. ACS Applied Nano Materials. 2020. 3. 5. 4077-4083
Akinaga H., Asai T. アナログ抵抗変化素子を用いた脳型回路. OYO BUTURI. 2020. 89. 1. 41-45
R. Rakshit, A. N. Hattori, Y. Naitoh, H. Shima, H. Akinaga, H. Tanaka. Three-dimensional Nanoconfinement Supports Verwey Transition in Fe3O4 Nanowire at 10 nm length scale. Nano Lett. 2019. 19. 5003-5010

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MISC (130)：

清水敦史, 清水敦史, 木下健太郎, 中畝悠介, 島久, 高橋慎, 内藤泰久, 秋永広幸. 合成領域の微細化による高品質MOF結晶の選択成長. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2018. 79th. ROMBUNNO.20a-222-8
島久, 高橋慎, 内藤泰久, 秋永広幸. 動作電圧制御によるTaO_x抵抗変化素子のアナログ抵抗変化特性の向上. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2018. 79th. ROMBUNNO.18p-432-5
奥田裕司, 奥田裕司, 奥田裕司, 川北純平, 川北純平, 谷内敏之, 谷内敏之, 島久, 島久, 清水敦史, 清水敦史, 内藤泰久, 内藤泰久, 秋永広幸, 秋永広幸, 木下健太郎, 辛埴, 辛埴. 化学状態の非破壊ナノイメージングを可能にする光電子顕微鏡開発. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2018. 79th. ROMBUNNO.20a-222-9
島久, 高橋慎, 内藤泰久, 秋永広幸. Research Progress on Resistance Change Device Based on Oxide Materials-Application for Non-volatile Memory and Neuromorphic Device-. 電子情報通信学会技術研究報告. 2018. 118. 173(ICD2018 14-38). 59-64
秋永広幸, 島久, 内藤泰久, 浅井哲也. アナログ型抵抗変化ニューロデバイス・システムのソフト・ハード一体型研究開発. 電子情報通信学会技術研究報告. 2018. 118. 10(ICD2018 1-13). 15

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Work history (7)：

2020 - 現在 National Institute of Advanced Industrial Science and Technology Principal Research Manager
2007 - 2008 National Institute of Advanced Industrial Science and Technology
2004 - 2005 National Institute of Advanced Industrial Science and Technology
2002 - 2005 National Institute of Advanced Industrial Science and Technology
2005 - National Institute of Advanced Industrial Science and Technology

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