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J-GLOBAL ID:201102213557713100   Reference number:11A1154916

A Genuine Power-Gatable Reconfigurable Logic Chip with FeRAM Cells

FeRAMセルを用いた本物の電力をゲート制御できる再構成可能なロジックチップ
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Material:
Volume: E94-C  Issue:Page: 548-556 (J-STAGE)  Publication year: 2011 
JST Material Number: L1370A  ISSN: 0916-8524  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Category name(code) classified by JST.
Semiconductor integrated circuit  ,  Power source circuit 
Reference (16):
  • USAMI, K. Methodologies for Power Gating. Leakage in Nanometer CMOS Technologies. 2006, 77-104
  • KIM, K. Future memory technology including emerging new memories. Proc. 24th Int'l Conf. on Microelectronics, NIS, Serbia and Montenegro, 2008. 2008, 1, 377-384
  • KIMURA, H. FeRAM and memory system. Int'l Solid-State Circuit Conf. (ISSCC) Supplymentary Material of SSD Memory Subsystem Innovation Forum, Feb. 2009. 2009
  • AMAGASAKI, M. An embedded reconfigurable IP core with variable grain logic cell architecture. Int'l Journal of Reconfigurable Computing. 2008, 2008
  • ROSE, J. Architecture of field-programmable gate arrays. Proc. IEEE. 1993, 81, 7, 1013-1028
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