Art

J-GLOBAL ID：201102225486791979   Reference number：11A1057968

Thermoelectric properties and electronic structure of p-type Mg₂Si and Mg₂Si_0.6Ge_0.4 compounds doped with Ga

Gaを添加したp型Mg₂SiおよびMg₂Si_0.6Ge_0.4化合物の熱電特性と電子構造

Author (5)： IHOU-MOUKO H. (Inst. Jean Lamour (I.J.L.) - UMR 7198 - Nancy-Universite, Ecole Nationale des Mines de Nancy, Parc de Saurupt, F ...) ,  MERCIER C. (Inst. Jean Lamour (I.J.L.) - UMR 7198 - Nancy-Universite, Ecole Nationale des Mines de Nancy, Parc de Saurupt, F ...) ,  TOBOLA J. (Fac. of Physics and Applied Computer Sci., AGH Univ. of Sci. and Technol., Al. Mickiewicza 30, 30-059 Cracow, POL) ,  PONT G. (Centre National d’Etudes Spatiales (CNES), 18 avenue Edouard Belin, 31401 Toulouse Cedex 09, FRA) ,  SCHERRER H. (Inst. Jean Lamour (I.J.L.) - UMR 7198 - Nancy-Universite, Ecole Nationale des Mines de Nancy, Parc de Saurupt, F ...)
Material： Journal of Alloys and Compounds  (J Alloy Compd)
Volume： 509  Issue： 23  Page： 6503-6508  Publication year： Jun. 09, 2011 
JST Material Number： D0083A  ISSN： 0925-8388  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *thermoelectric material ,  electrical characteristic ,  *silicide ,  magnesium compound ,  germanium compound ,  additive effect ,  Gallium ,  *electronic structure ,  dependence ,  solid solution ,  temperature dependence ,  thermoelectromotive force ,  electrical resistivity ,  coefficient ,  thermal conductivity ,  P-type semiconductor ,  performance index ,  Fermi level ,  approximation method ,  band structure ,  state density ,  transport coefficient ,  crystal structure ,  lattice constant ,  Hall coefficient ,  KKR method ,  Seebeck coefficient ,  composition dependence
Semi thesaurus term： Korringa-Kohn-Rostoker method ,  thermoelectric characteristic

JST classification (1)： Thermoelectric devices  (NC03090J)

Terms in the title (3)： Ga ,  熱電特性 ,  電子構造