Art

J-GLOBAL ID：201102225557494954   Reference number：11A1777843

Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

傾斜組成多重量子障壁によるInGaN/GaN発光ダイオード中の正孔輸送の改善

Author (11)： WANG C. H. (Dep. of Photonics and Inst. of Electro-Optical Engineering, National Chiao-Tung Univ., Hsinchu, Taiwan) ,  CHANG S. P. (Dep. of Photonics and Inst. of Electro-Optical Engineering, National Chiao-Tung Univ., Hsinchu, Taiwan) ,  KU P. H. (Dep. of Photonics and Inst. of Electro-Optical Engineering, National Chiao-Tung Univ., Hsinchu, Taiwan) ,  LI J. C. (Dep. of Photonics and Inst. of Electro-Optical Engineering, National Chiao-Tung Univ., Hsinchu, Taiwan) ,  LAN Y. P. (Dep. of Photonics and Inst. of Electro-Optical Engineering, National Chiao-Tung Univ., Hsinchu, Taiwan) ,  LIN C. C. (Inst. of Lighting and Energy Photonics, National Chiao Tung Univ., Tainan County, Taiwan) ,  YANG H. C. (R&D Div., Epistar Co., Ltd., Science-based Industrial Park, Hsinchu, Taiwan) ,  KUO H. C. (Dep. of Photonics and Inst. of Electro-Optical Engineering, National Chiao-Tung Univ., Hsinchu, Taiwan) ,  LU T. C. (Dep. of Photonics and Inst. of Electro-Optical Engineering, National Chiao-Tung Univ., Hsinchu, Taiwan) ,  WANG S. C. (Dep. of Photonics and Inst. of Electro-Optical Engineering, National Chiao-Tung Univ., Hsinchu, Taiwan) ,  CHANG C. Y. (Inst. of Electronics, National Chiao-Tung Univ., Hsinchu, Taiwan)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 99  Issue： 17  Page： 171106  Publication year： Oct. 24, 2011 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： functional gradient material ,  *potential barrier ,  gallium nitride ,  indium compound ,  compound semiconductor ,  semiconductor material ,  *light emitting diode ,  *transport phenomenon ,  substrate(plate)
Semi thesaurus term： sapphire substrate ,  gradient composition ,  *hole transport ,  *multi-quantum barriers

JST classification (1)： Light emitting devices  (NC03082G)

Terms in the title (6)： 傾斜組成 ,  多重量子障壁 ,  InGaN ,  GaN ,  発光ダイオード ,  正孔輸送