Art

J-GLOBAL ID：201102244214812203   Reference number：11A1161455

A 58nm 1.8V 1Gb PRAM with 6.4MB/s Program BW

6.4MB/s プログラムBW付き58nm 1.8V 1Gb PRAM

Author (35)： CHUNG Hoeju (Samsung Electronics, Hwasung, KOR) ,  JEONG Byung Hoon (Samsung Electronics, Hwasung, KOR) ,  MIN ByungJun (Samsung Electronics, Hwasung, KOR) ,  CHOI Youngdon (Samsung Electronics, Hwasung, KOR) ,  CHO Beak-Hyung (Samsung Electronics, Hwasung, KOR) ,  SHIN Junho (Samsung Electronics, Hwasung, KOR) ,  KIM Jinyoung (Samsung Electronics, Hwasung, KOR) ,  SUNWOO Jung (Samsung Electronics, Hwasung, KOR) ,  PARK Joon-Min (Samsung Electronics, Hwasung, KOR) ,  WANG Qi (Samsung Electronics, Hwasung, KOR) ,  LEE Yong-Jun (Samsung Electronics, Hwasung, KOR) ,  CHA Sooho (Samsung Electronics, Hwasung, KOR) ,  KWON Dukmin (Samsung Electronics, Hwasung, KOR) ,  KIM Sangtae (Samsung Electronics, Hwasung, KOR) ,  KIM Sunghoon (Samsung Electronics, Hwasung, KOR) ,  RHO Yoohwan (Samsung Electronics, Hwasung, KOR) ,  PARK Mu-Hui (Samsung Electronics, Hwasung, KOR) ,  KIM Jaewhan (Samsung Electronics, Hwasung, KOR) ,  SONG Ickhyun (Samsung Electronics, Hwasung, KOR) ,  JUN Sunghyun (Samsung Electronics, Hwasung, KOR) ,  LEE Jaewook (Samsung Electronics, Hwasung, KOR) ,  KIM KiSeung (Samsung Electronics, Hwasung, KOR) ,  LIM Ki-Won (Samsung Electronics, Hwasung, KOR) ,  CHUNG Won-Ryul (Samsung Electronics, Hwasung, KOR) ,  CHOI ChangHan (Samsung Electronics, Hwasung, KOR) ,  CHO HoGeun (Samsung Electronics, Hwasung, KOR) ,  SHIN Inchul (Samsung Electronics, Hwasung, KOR) ,  JUN Woochul (Samsung Electronics, Hwasung, KOR) ,  HWANG Seokwon (Samsung Electronics, Hwasung, KOR) ,  SONG Ki-Whan (Samsung Electronics, Hwasung, KOR) ,  LEE KwangJin (Samsung Electronics, Hwasung, KOR) ,  CHANG Sang-Whan (Samsung Electronics, Hwasung, KOR) ,  CHO Woo-Yeong (Samsung Electronics, Hwasung, KOR) ,  YOO Jei-Hwan (Samsung Electronics, Hwasung, KOR) ,  JUN Young-Hyun (Samsung Electronics, Hwasung, KOR)
Material： Digest of Technical Papers. IEEE International Solid-State Circuits Conference  (ISSCC)
Volume： 2011  Page： 500-501,501A  Publication year： 2011 
JST Material Number： D0753A  ISSN： 0193-6530  Document type： Proceedings
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *phase change random access memory ,  scalability ,  bandwidth ,  *nonvolatile memory ,  routing ,  channel ,  interface ,  communication operation

JST classification (1)： Memory units  (JC04060F)

Terms in the title (1)： PRAM