Art
J-GLOBAL ID:201102256088610509   Reference number:11A0084990

Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0001) vicinal substrates

近傍4H-SiC(0001)を用いたMBE法によって成長させたAlGaN/GaN HEMT構造の電気的特性
Author (6):
Material:
Volume: 301  Page: 452-456  Publication year: 2007 
JST Material Number: O3553A  ISSN: 0022-0248  Document type: Article
Country of issue: Other (ZZZ)  Language: ENGLISH (EN)

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