Art

J-GLOBAL ID：201102273959702167   Reference number：11A1208801

Effects of substrate temperature and film thickness on properties of CuIn₃Te₅ thin films and solar cells

CuIn₃Te₅薄膜と太陽電池の特性に及ぼす基板温度と膜厚の影響

Author (2)： MISE Takahiro (Dep. of Electrical Engineering and Electronics, Aoyama Gakuin Univ., 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa ...) ,  NAKADA Tokio (Dep. of Electrical Engineering and Electronics, Aoyama Gakuin Univ., 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa ...)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 110  Issue： 1  Page： 014504  Publication year： Jul. 01, 2011 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： copper compound ,  indium compound ,  telluride (chalcogenide) ,  *semiconductor thin film ,  *solar cell ,  substrate temperature ,  film thickness ,  MBE growth ,  Molybdenum ,  covering ,  soda glass ,  substrate (plate) ,  micro structure ,  scanning electron microscope ,  X-Ray Diffraction ,  cathodoluminescence ,  temperature dependence ,  Hall effect ,  defect level ,  shallow level ,  carrier recombination ,  electrical property

JST classification (2)： Semiconductor thin films  (BK14040E) ,  Solar cell  (NC03084O)

Terms in the title (4)： 薄膜 ,  太陽電池 ,  基板温度 ,  膜厚