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J-GLOBAL ID:201110015872641007   Research Resource code:1000002048 Update date:Dec. 17, 2004

Equippment for preparation and evaluation of semiconduct and metal films

半導体薄膜作成評価装置
Owning Organization:
Contact: KAWABATA Keishi
Resource classification: Experience equipment, Facilities, etc
Research area  (1): Electron/electric material engineering
Overview:
Preparation and evaluation of semiconducting thin
films (RF-DC interconnected sputtering apparatus,
X-ray photoelectron spectroscopy)
Major purpose: Equipment for production of
semiconductors, metal films and their chemical
compound and for analysis of their chemical
composition and chemical binding states
(1) Equipment for preparation of thin films
Films to be prepared: W, Ta, Mo, Ni, Co, TiN, WNX,
N.S., CoSi, SnNx, T.N, CuNi and Mg
(2) X-ray photoelectron spectroscopy
Films to be evaluated: W, Ta, Mo, Ni, Co, TiN, WNX,
N.S., CoSi, SnO2, ITO, SnNx, TiNi and CuNi
User environment and conditions:
The facility is available, unless it affects
researches at Hiroshima Institute of
Technology (H.I.T) are doing.
User procedures and method:
For further information, contact to the person
in charge beforehand.

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