Rsrc
J-GLOBAL ID:201110022947160570   Research Resource code:1000001976 Update date:Feb. 10, 2005

Ion beam irradiation apparatus Improvement of semiconductor surfaces by means of multi-ionized molecular beam technology for fabrication of ULSI

複合粒子線半導体材料表面改質装置
Owning Organization:
Contact: YOKOTA Katsuhiro
Resource classification: Experience equipment, Facilities, etc
Overview:
Metal molecules evaporated from e-gun, as necessary,
are ionized with colliding with electron-beams and gas
molecules, as an elemeut of compound, are ionized by use
of Kafman type or ECR ion-sources. The beams are applied
onto semiconductor surfaces to deposit materials which
are Low K. high K. and very lowresistivity films useful
for fabrication on ULSI
User procedures and method:
For details, contact a person in charge.

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