Rsrc
J-GLOBAL ID：201110022947160570
Research Resource code：1000001976
Update date：Feb. 10, 2005
Ion beam irradiation apparatus Improvement of semiconductor surfaces by means of multi-ionized molecular beam technology for fabrication of ULSI
複合粒子線半導体材料表面改質装置
Owning Organization：
Contact：
YOKOTA Katsuhiro
Resource classification：
Experience equipment, Facilities, etc
Overview：
Metal molecules evaporated from e-gun, as necessary,
are ionized with colliding with electron-beams and gas
molecules, as an elemeut of compound, are ionized by use
of Kafman type or ECR ion-sources. The beams are applied
onto semiconductor surfaces to deposit materials which
are Low K. high K. and very lowresistivity films useful
for fabrication on ULSI
User procedures and method：
For details, contact a person in charge.
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