Rsrc
J-GLOBAL ID:201110091386580371   Research Resource code:5000004347 Update date:Jan. 24, 2006

Apparatus of plasma assisted chemical Vapor deposition.

プラズマCVD装置
Owning Organization:
Contact: KUSABIRAKI Kiyoshi
Resource classification: Experience equipment, Facilities, etc
Research area  (3): Thin film and surface interface physical properties ,  Metallic physical properties ,  Inorganic material/physical properties
Overview:
This apparatus is used to deposit new kinds of
inorganic thin films at relatively low temperature.
Chemical reaction is promoted by charged particles
excited in high frequency electromagnetic field.
User procedures and method:
[Procedure for Use] Make inquiries with a clerk in
charge.
[Qualification] Cooperative researchers with
researchers in Toyama University.

Return to Previous Page