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J-GLOBAL ID:201201019302117914   Update date: Feb. 01, 2024

Takeda Sakura Nishino

Takeda Sakura Nishino
Affiliation and department:
Job title: Assistant Professor
Homepage URL  (1): https://sites.google.com/site/sntprojects/
Research field  (2): Thin-film surfaces and interfaces ,  Semiconductors, optical and atomic physics
Research keywords  (10): Non-linear phenomena ,  Quantized Electronic States ,  Electron-phonon interaction ,  Inversion Layer ,  ARPES ,  RHEED ,  電子物性 ,  表面・界面 ,  Cathode Luminescence ,  Raman
Research theme for competitive and other funds  (8):
  • 2022 - 2025 Electronic structures beneath IV semiconductor surfaces probed by photoelectron and luminescence spectroscopies
  • 2014 - 2019 Control of 3D atomic structures of impurities doped in semiconductors and its application to low-loss high efficient devices
  • 2012 - 2015 Strain and valence band structure in the subsurface region of strained semiconductors
  • 2010 - 2014 Anisotropy of subband structure of Si and Ge surface inversion layers and control of its physical properties by means of strain
  • 2008 - 2010 Measurement of change in subband in-plane effective masses of strained p-channels
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Papers (39):
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MISC (2):
  • Hashimura Shiori, Takeda Sakura, Daimon Hiroshi. New phase of Si(111)-Li surface and initial adsorption structure. Abstract of annual meeting of the Surface Science of Japan. 2011. 31. 0. 50-50
  • 武田さくら, 松田和久, 島和也, 安井伸太郎, 酒井智香子, 桑子敦, 大門寛. Si(111)上へのNa,Mg吸着初期過程のリアルタイムモニタリング. 日本物理学会講演概要集. 2008. 63. 2
Lectures and oral presentations  (193):
  • Relationship between heating current and temperature of Si at 300°C to 500°C determined by thermal emission spectroscopy
    (The Physical Society of Japan, 2023 Spring Meeting, 2023)
  • Exploratory determination of band bending potentials satisfying measured subband levels in ion-implanted Si(001) p-type inversion layers
    (The Physical Society of Japan 2023 Spring Meeting 2023)
  • Flattening of the band profile of Si(111) p-type space charge layer by the standing wave formation of valence electrons
    (70th JSAP Spring Meeting 2023 2023)
  • シリコン表面直下領域の価電子状態:実測と理解、デバイス応用
    (物質科学&デバイス物理研究会 2023)
  • 実測サブバンド準位を満たすイオン打ち込みSi(001)p型反転層形状の探索的決定
    (「電子デバイス界面テクノロジー研究会 -材料・プロセス・デバイス特性の物理-」 (第28回研究会) EDIT28)
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Education (2):
  • 1994 - 1999 The University of Tokyo
  • 1990 - 1994 Tokyo University of Science
Professional career (1):
  • Ph.D in Physics (Univ. Tokyo)
Work history (1):
  • 1999/04 - 現在 Nara Institute of Science and Technology
Committee career (12):
  • 2018 - 現在 応用物理学会 代議員
  • 2018 - 現在 応用物理学会 薄膜表面分科会 幹事
  • 2017 - 現在 International Conference on Solid State Devices and Materials (SSDM) program committee
  • 2008 - 現在 電子デバイス界面テクノロジー研究会(旧ゲートスタック研究会) プログラム・実行委員
  • 2016 - 2018 International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) Publicity Committee
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Awards (2):
  • 2007/09 - The Physical Society of Japan Young Scientist Award Experimental Determination of Hole Subbands in Si Inversion Layer
  • 2003/08 - Japan Society of Applied Physics Young Scientist Presentation Award Determination of in-plane dispersion of hole subbands in Si inversion layer by ARPES
Association Membership(s) (5):
Institute of Electrical and Electronics Engineers (IEEE) ,  THE JAPANESE SOCIETY FOR SYNCHROTRON RADIATION RESEARCH ,  The Japan Society of Vacuum and Surface Science ,  THE JAPAN SOCIETY OF APPLIED PHYSICS ,  THE PHYSICAL SOCIETY OF JAPAN
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