Art

J-GLOBAL ID：201202202901539153   Reference number：12A1143403

A 20nm 1.8V 8Gb PRAM with 40MB/s Program Bandwidth

40MB/sのプログラム帯域幅を備えた20nm 1.8V 8Gb PRAM

Author (30)： CHOI Youngdon (Samsung Electronics, Hwasung, KOR) ,  SONG Ickhyun (Samsung Electronics, Hwasung, KOR) ,  PARK Mu-Hui (Samsung Electronics, Hwasung, KOR) ,  CHUNG Hoeju (Samsung Electronics, Hwasung, KOR) ,  CHANG Sanghoan (Samsung Electronics, Hwasung, KOR) ,  CHO Beakhyoung (Samsung Electronics, Hwasung, KOR) ,  KIM Jinyoung (Samsung Electronics, Hwasung, KOR) ,  OH Younghoon (Samsung Electronics, Hwasung, KOR) ,  KWON Duckmin (Samsung Electronics, Hwasung, KOR) ,  JUNG Sunwoo (Samsung Electronics, Hwasung, KOR) ,  SHIN Junho (Samsung Electronics, Hwasung, KOR) ,  RHO Yoohwan (Samsung Electronics, Hwasung, KOR) ,  LEE Changsoo (Samsung Electronics, Hwasung, KOR) ,  KANG Min Gu (Samsung Electronics, Hwasung, KOR) ,  LEE Jaeyun (Samsung Electronics, Hwasung, KOR) ,  KWON Yongjin (Samsung Electronics, Hwasung, KOR) ,  KIM Soehee (Samsung Electronics, Hwasung, KOR) ,  KIM Jaehwan (Samsung Electronics, Hwasung, KOR) ,  LEE Yong-Jun (Samsung Electronics, Hwasung, KOR) ,  WANG Qi (Samsung Electronics, Hwasung, KOR) ,  CHA Sooho (Samsung Electronics, Hwasung, KOR) ,  AHN Sujin (Samsung Electronics, Hwasung, KOR) ,  HORII Hideki (Samsung Electronics, Hwasung, KOR) ,  LEE Jaewook (Samsung Electronics, Hwasung, KOR) ,  KIM Kisung (Samsung Electronics, Hwasung, KOR) ,  JOO Hansung (Samsung Electronics, Hwasung, KOR) ,  LEE Kwangjin (Samsung Electronics, Hwasung, KOR) ,  LEE Yeong-Taek (Samsung Electronics, Hwasung, KOR) ,  YOO Jeihwan (Samsung Electronics, Hwasung, KOR) ,  JEONG Gitae (Samsung Electronics, Hwasung, KOR)
Material： Digest of Technical Papers. IEEE International Solid-State Circuits Conference  (ISSCC)
Volume： 2012  Page： 46-47,47A  Publication year： 2012 
JST Material Number： D0753A  ISSN： 0193-6530  Document type： Proceedings
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *phase change random access memory ,  main memory ,  external memory ,  *density ,  *bandwidth ,  memory element ,  element decomposition ,  wiring ,  electric resistance ,  stray capacity ,  data reading ,  data writing ,  semiconductor process ,  prototype ,  efficiency ,  computer programming ,  module
Semi thesaurus term： CMOS process ,  *cell density ,  bit line ,  word line ,  parasitic resistance ,  area efficiency ,  subarray

JST classification (2)： Semiconductor integrated circuit  (NC03162T) ,  Memory units  (JC04060F)

Terms in the title (2)： 帯域幅 ,  PRAM