Art

J-GLOBAL ID：201202211623025827   Reference number：12A1763885

Electronic band structure and effective mass parameters of Ge_1-xSn_x alloys

Ge_1-xSn_x合金の電子バンド構造と有効質量パラメータ

Author (5)： LU LOW Kain (Dep. of Electrical and Computer Engineering, National Univ. of Singapore, Singapore 119260) ,  YANG Yue (Dep. of Electrical and Computer Engineering, National Univ. of Singapore, Singapore 119260) ,  HAN Genquan (Dep. of Electrical and Computer Engineering, National Univ. of Singapore, Singapore 119260) ,  FAN Weijun (Dep. of Electrical and Electronic Engineering, Nanyang Technological Univ., Singapore 639798) ,  YEO Yee-chia (Dep. of Electrical and Computer Engineering, National Univ. of Singapore, Singapore 119260)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 112  Issue： 10  Page： 103715-103715-9  Publication year： Nov. 15, 2012 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *band structure ,  *effective mass ,  *parameter ,  tin containing alloy ,  *germanium base alloy ,  pseudopotential method ,  form factor ,  Brillouin zone ,  approximation method ,  semiconductor thin film ,  Hamiltonian ,  perturbation theory ,  dispersion ,  Luttinger liquid ,  optical element ,  solid state device ,  k p method ,  diamond semiconductor ,  band edge ,  electronic band structure ,  fitting (approximation) ,  electron device
Semi thesaurus term： fitting (approximation) ,  electron device

JST classification (1)： Electronic structure of crystalline semiconductors  (BM02060N)

Terms in the title (4)： 合金 ,  電子バンド構造 ,  有効質量 ,  パラメータ