Art

J-GLOBAL ID：201202230864787528   Reference number：12A1143573

An 8Mb Multi-Layered Cross-Point ReRAM Macro with 443MB/s Write Throughput

書込みスループット443MB/sの8Mb多層クロスポイント型ReRAMマクロ

Author (20)： KAWAHARA Akifumi (Panasonic, Moriguchi, JPN) ,  AZUMA Ryotaro (Panasonic, Moriguchi, JPN) ,  IKEDA Yuuichirou (Panasonic, Moriguchi, JPN) ,  KAWAI Ken (Panasonic, Moriguchi, JPN) ,  KATOH Yoshikazu (Panasonic, Moriguchi, JPN) ,  TANABE Kouhei (Panasonic, Nagaokakyo, JPN) ,  NAKAMURA Toshihiro (Panasonic, Nagaokakyo, JPN) ,  SUMIMOTO Yoshihiko (Panasonic, Nagaokakyo, JPN) ,  YAMADA Naoki (Panasonic, Nagaokakyo, JPN) ,  NAKAI Nobuyuki (Panasonic, Nagaokakyo, JPN) ,  SAKAMOTO Shoji (Panasonic, Nagaokakyo, JPN) ,  HAYAKAWA Yukio (Panasonic, Moriguchi, JPN) ,  TSUJI Kiyotaka (Panasonic, Moriguchi, JPN) ,  YONEDA Shinichi (Panasonic, Moriguchi, JPN) ,  HIMENO Atsushi (Panasonic, Moriguchi, JPN) ,  ORIGASA Ken-ichi (Panasonic, Nagaokakyo, JPN) ,  SHIMAKAWA Kazuhiko (Panasonic, Moriguchi, JPN) ,  TAKAGI Takeshi (Panasonic, Moriguchi, JPN) ,  MIKAWA Takumi (Panasonic, Moriguchi, JPN) ,  AONO Kunitoshi (Panasonic, Moriguchi, JPN)
Material： Digest of Technical Papers. IEEE International Solid-State Circuits Conference  (ISSCC)
Volume： 2012  Page： 432-433,433A  Publication year： 2012 
JST Material Number： D0753A  ISSN： 0193-6530  Document type： Proceedings
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *RAM ,  tantalum oxide ,  multistory structure ,  *throughput ,  data writing ,  macrocell ,  property ,  diode ,  mass memory ,  wiring ,  current control ,  *leakage current ,  semiconductor process ,  voltage ,  nonvolatile memory
Semi thesaurus term： CMOS process ,  *resistance random access memory ,  bit line ,  bidirectional ,  electrical low voltage

JST classification (2)： Memory units  (JC04060F) ,  Semiconductor integrated circuit  (NC03162T)

Terms in the title (6)： 書込み ,  スループット ,  多層 ,  ポイント ,  ReRAM ,  マクロ