Art

J-GLOBAL ID：201202231070509929   Reference number：12A1602419

Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer

薄いZnO界面層を介したn型GeにおけるFermi準位の脱ピン止めと低い電気抵抗率

Author (9)： PARAMAHANS MANIK Prashanth (Center of Excellence in Nanoelectronics, Dep. of Electrical Engineering, Indian Inst. of Technol. Bombay, Mumbai ...) ,  KESH MISHRA Ravi (Center of Excellence in Nanoelectronics, Dep. of Electrical Engineering, Indian Inst. of Technol. Bombay, Mumbai ...) ,  PAVAN KISHORE V. (Center of Excellence in Nanoelectronics, Dep. of Electrical Engineering, Indian Inst. of Technol. Bombay, Mumbai ...) ,  RAY Prasenjit (Center of Excellence in Nanoelectronics, Dep. of Electrical Engineering, Indian Inst. of Technol. Bombay, Mumbai ...) ,  NAINANI Aneesh (Applied Materials Inc., Santa Clara, California 94085, USA) ,  HUANG Yi-chiau (Applied Materials Inc., Santa Clara, California 94085, USA) ,  ABRAHAM Mathew C. (Applied Materials Inc., Santa Clara, California 94085, USA) ,  GANGULY Udayan (Center of Excellence in Nanoelectronics, Dep. of Electrical Engineering, Indian Inst. of Technol. Bombay, Mumbai ...) ,  LODHA Saurabh (Center of Excellence in Nanoelectronics, Dep. of Electrical Engineering, Indian Inst. of Technol. Bombay, Mumbai ...)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 101  Issue： 18  Page： 182105-182105-5  Publication year： Oct. 29, 2012 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *N-type semiconductor ,  *Germanium ,  Fermi level ,  *semiconductor junction ,  boundary layer ,  zinc oxide ,  vacancy ,  pinning ,  ohmic contact ,  rectification (electric) ,  *current-voltage characteristic ,  electrical resistivity ,  current density ,  height ,  conduction band ,  potential barrier ,  *tunnel effect ,  annealing (heat treatment) ,  epitaxy ,  interface layer ,  oxygen vacancy ,  barrier height ,  depinning ,  layer
Semi thesaurus term： tunnel barrier

JST classification (1)： Metal-insulator-semiconductor structures  (BM03085X)

Terms in the title (6)： ZnO ,  界面層 ,  Ge ,  Fermi準位 ,  脱ピン止め ,  電気抵抗率