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J-GLOBAL ID:201202239118371399   Reference number:12A0549343

Extremely long carrier lifetime over 200 ns in GaAs wall-inserted type II InAs quantum dots

GaAs壁挿入タイプII InAs量子ドットにおける200s超の非常に長いキャリア寿命
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Volume: 100  Issue: 11  Page: 113105-113105-3  Publication year: Mar. 12, 2012 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Electric conduction in semiconductors and insulators in general  ,  Electronic structure of crystalline semiconductors 
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