Art
J-GLOBAL ID:201202240940933585   Reference number:12A1602206

An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO2/GeO2 bilayer passivation

SiO2/GeO2二層不動態皮膜を有するGe金属-絶縁体-半導体キャパシタの界面準位の深準位過渡分光による正確なキャラクタリゼーション
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Material:
Volume: 112  Issue:Page: 083707-083707-5  Publication year: Oct. 15, 2012 
JST Material Number: C0266A  ISSN: 0021-8979  CODEN: JAPIAU  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Metal-insulator-semiconductor structures 

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