Fabrication of fully epitaxial magnetic tunnel junctions with a Heusler alloy Co<sub>2</sub>MnSi thin film and a MgO barrier on Ge(001) substrates

LI Gui-fang; TAIRA Tomoyuki; LIU Hong-xi; MATSUDA Ken-ichi; UEMURA Tetsuya; YAMAMOTO Masafumi

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J-GLOBAL ID：201202249047601172 Reference number：12A0587919

Fabrication of fully epitaxial magnetic tunnel junctions with a Heusler alloy Co₂MnSi thin film and a MgO barrier on Ge(001) substrates

Ge(001)基板上のホイスラー合金Co₂MnSi薄膜とMgO障壁をもつ完全にエピタキシアルな磁性トンネル接合の製造

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Volume： 59th Page： ROMBUNNO.16A-B4-5 Publication year： Feb. 29, 2012
JST Material Number： Y0054B Document type： Proceedings
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Manufacturing technology of solid-state devices , Metal-insulator-semiconductor structures

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Fabrication of fully epitaxial magnetic tunnel junctions with a Heusler alloy Co2MnSi thin film and a MgO barrier on Ge(001) substrates

Fabrication of fully epitaxial magnetic tunnel junctions with a Heusler alloy Co₂MnSi thin film and a MgO barrier on Ge(001) substrates