Art

J-GLOBAL ID：201202262912967052   Reference number：12A1311288

Preparation and characterization of ZnS thin films by the chemical bath deposition method

化学浴析出法によるZnS薄膜の作製と評価

Author (4)： IWASHITA Taisuke (Dep. of Electrical Engineering, Fac. of Engineering, Tokyo Univ. of Sci. 1-14-6 Kudankita, Chiyoda, Tokyo 102-0073, JPN) ,  ANDO Shizutoshi (Dep. of Electrical Engineering, Fac. of Engineering, Tokyo Univ. of Sci. 1-14-6 Kudankita, Chiyoda, Tokyo 102-0073, JPN) ,  ANDO Shizutoshi (Res. Inst. for Sci. and Technol., Advanced Device Laboratories (ADL), Tokyo Univ. of Sci., 1-3 Kagurazaka, Shinjuku ...) ,  ANDO Shizutoshi (Res. Inst. for Sci. and Technol., Photovoltaic Sci. & Technol. Res. Div., Tokyo Univ. of Sci., 1-3 Kagurazaka ...)
Material： Thin Solid Films
Volume： 520  Issue： 24  Page： 7076-7082  Publication year： Oct. 01, 2012 
JST Material Number： B0899A  ISSN： 0040-6090  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *zinc sulfide ,  compound semiconductor ,  semiconductor thin film ,  *precipitation (phase separation) ,  thin film growth ,  substrate (plate) ,  Quartz ,  X-Ray Diffraction ,  scanning electron microscope ,  energy dispersive X-ray spectrometry ,  optical transmission ,  *catalyst ,  *morphology (form) ,  surface roughness ,  flatness (property) ,  smoothness ,  *buffer layer ,  solar cell ,  *Autocatalyst ,  surface morphology
Semi thesaurus term： *chemical bath deposition ,  scanning electron microscope

JST classification (2)： Semiconductor thin films  (BK14040E) ,  Solar cell  (NC03084O)

Terms in the title (5)： 化学浴析出法 ,  ZnS ,  薄膜 ,  作製 ,  評価