Art

J-GLOBAL ID：201202275075118470   Reference number：12A1327966

Luminescence gap in hydrogenated amorphous silicon

水素化非晶質シリコンにおけるルミネセンスギャップ

Author (5)： MURAYAMA Kazuro (Coll. of Humanities and Sciences, Nihon Univ., Sakurajosui 3-25-40, Setagaya-ku, Tokyo 156-8550, JPN) ,  SAGAWA Ryo (Coll. of Humanities and Sciences, Nihon Univ., Sakurajosui 3-25-40, Setagaya-ku, Tokyo 156-8550, JPN) ,  MONJI Kunitaka (Coll. of Humanities and Sciences, Nihon Univ., Sakurajosui 3-25-40, Setagaya-ku, Tokyo 156-8550, JPN) ,  TSUSHIMA Kouhei (Coll. of Humanities and Sciences, Nihon Univ., Sakurajosui 3-25-40, Setagaya-ku, Tokyo 156-8550, JPN) ,  DEKI Hidenori (Hiroshima Kokusai Gakuin Univ., Nakano, Aki-ku, Hiroshima-shi, Hiroshima-ken 739-0321, JPN)
Material： Journal of Non-Crystalline Solids  (J Non-Cryst Solid)
Volume： 358  Issue： 17  Page： 2027-2030  Publication year： Sep. 01, 2012 
JST Material Number： D0642A  ISSN： 0022-3093  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *Luminescence ,  *semiconductor thin film ,  *amorphous silicon ,  *optical gap ,  *hydride ,  thermalization ,  hopping conduction ,  plasma CVD ,  temperature dependence ,  excitation energy ,  dependence ,  porous silicon ,  hydrogenated amorphous silicon

JST classification (3)： Semiconductor thin films  (BK14040E) ,  Inorganic compounds and elements in general  (CD01010D) ,  Luminescence of semiconductors  (BM08092S)

Terms in the title (2)： 水素化 ,  非晶質シリコン