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J-GLOBAL ID:201202279723253197   Reference number:12A0895417

Energy band bending induced charge accumulation at fullerene/bathocuproine heterojunction interface

フラーレン/バソクプロインのヘテロ接合界面におけるエネルギーバンド曲げ誘起電荷蓄積
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Material:
Volume: 100  Issue: 24  Page: 243301-243301-4  Publication year: Jun. 11, 2012 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

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Electronic structure of crystalline semiconductors  ,  Semiconductor-semiconductor contacts without Gr.13-15 element compounds  ,  Solar cell 
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