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J-GLOBAL ID:201202280376203638   Reference number:12A0960479

Modification of Magnetic Nanocontact Structure by a Bias-Voltage-Induced Stress and Its Influence on Magnetoresistance Effect in TaOx Nano-Oxide Layer Spin Valve

バイアス電圧で誘起された応力による磁気ナノコンタクト構造の改善,並びに,TaOxナノ酸化物層のスピンバルブの磁気抵抗に及ぼすその改善の影響
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Volume: 51  Issue: 6,Issue 1  Page: 063002.1-063002.8  Publication year: Jun. 25, 2012 
JST Material Number: G0520B  ISSN: 0021-4922  CODEN: JJAPB6  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Other solid-state devices 
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