Art

J-GLOBAL ID：201202282315760332   Reference number：12A1187598

Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

抵抗RAMのための酸化アルミニウム中の酸素空格子点により生じた伝導バンド

Author (7)： NIGO Seisuke (National Inst. for Materials Sci., 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, JPN) ,  KUBOTA Masato (Japan Atomic Energy Agency, 2-4 Shirane Shirakata, Tokai-mura, Ibaraki 319-1195, JPN) ,  HARADA Yoshitomo (National Inst. for Materials Sci., 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, JPN) ,  HIRAYAMA Taisei (Rigaku Corp., 3-9-12 Matsubara-cho, Akishima, Tokyo 196-8666, JPN) ,  KATO Seiichi (National Inst. for Materials Sci., 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, JPN) ,  KITAZAWA Hideaki (National Inst. for Materials Sci., 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, JPN) ,  KIDO Giyuu (National Inst. for Materials Sci., 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, JPN)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 112  Issue： 3  Page： 033711-033711-6  Publication year： Aug. 01, 2012 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *RAM ,  *Aluminum Oxide ,  *vacancy ,  *conduction band ,  first principle ,  electronic structure ,  simulation ,  *band gap ,  thermally stimulated current ,  carrier injection ,  structural relaxation ,  switching ,  electric current ,  electric resistance ,  reset current ,  *oxygen vacancy ,  *impurity band

JST classification (3)： Electronic structure of crystalline insulators  (BM02070Y) ,  Electronic structure of impurites and defects  (BM02100I) ,  Memory units  (JC04060F)

Terms in the title (4)： RAM ,  酸化アルミニウム ,  酸素空格子点 ,  伝導バンド