Art

J-GLOBAL ID：201202284215385839   Reference number：12A0721276

ReRAM technology; challenges and prospects

ReRAM技術;課題および見通し

Author (2)： AKINAGA Hiro (Innovation Center for Advanced Nanodevices (ICAN), National Inst. of Advanced Industrial Sci. and Technol. (AIST)) ,  SHIMA Hisashi (Innovation Center for Advanced Nanodevices (ICAN), National Inst. of Advanced Industrial Sci. and Technol. (AIST))
Material： IEICE Electronics Express (Web)  (IEICE Electron Express (Web))
Volume： 9  Issue： 8  Page： 795-807 (J-STAGE)  Publication year： 2012 
JST Material Number： U0039A  ISSN： 1349-2543  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *RAM ,  *electric resistance ,  nonvolatile memory ,  *electrochemistry ,  *switching ,  *oxidation-reduction reaction ,  oxide ,  functional device ,  laminate structure ,  memory element ,  current-voltage characteristic ,  platinum ,  cobalt oxide ,  device structure ,  tantalum oxide ,  tantalum ,  stability ,  reliability(property)
Semi thesaurus term： resistance random access memory ,  resistance switching ,  MOM構造

JST classification (1)： Semiconductor integrated circuit  (NC03162T)

Reference (33)：

• [1] Visit [Online] http://www.itrs.net/ for latest version of International Technology Roadmap of Semiconductors. Technology working groups of Emerging Research Devices and Materials show the functional oxides and ReRAM.
• [2] H. Akinaga and H. Shima, “Resistive Random Access Memory (ReRAM) Based on Metal Oxides,” Special Issue of IEEE Proceedings “Nanoelectronics Research for Beyond CMOS Information Processing,” vol. 98, no. 12, pp. 2237-2251, 2010.
• [3] T. W. Hickmott, “Low-Frequency Negative Resistance in Thin Anodic Oxide Films,” J. Appl. Phys., vol. 33, no. 9, pp. 2669-2682, 1962.
• [4] H. Shima and Y. Tamai, “Oxide nanolayer improving RRAM operational performance,” Microelectronics Journal, vol. 40, no. 3, pp. 628-632, 2009.
• [5] J. F. Gibbons and W. E. Beadle, “Switching Properties of Thin NiO Films,” Solid-State Electronics, vol. 7, pp. 785-797, 1964.

Terms in the title (2)： ReRAM ,  見通し