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J-GLOBAL ID：201202285135274242   Reference number：12A1467096

Excellent p-n control in a high temperature thermoelectric boride

高温熱電性ホウ化物における優れたp-n制御

Author (5)： MARUYAMA Satofumi (National Inst. for Materials Sci. (NIMS), 1-1 Namiki, Tsukuba 305-0044, JPN) ,  MIYAZAKI Yuzuru (Dep. of Applied Physics, Graduate School of Engineering, Tohoku Univ., 6-6-05 Aoba, Aramaki, Aoba-ku, Sendai ...) ,  HAYASHI Kei (Dep. of Applied Physics, Graduate School of Engineering, Tohoku Univ., 6-6-05 Aoba, Aramaki, Aoba-ku, Sendai ...) ,  KAJITANI Tsuyoshi (Dep. of Applied Physics, Graduate School of Engineering, Tohoku Univ., 6-6-05 Aoba, Aramaki, Aoba-ku, Sendai ...) ,  MORI Takao (National Inst. for Materials Sci. (NIMS), 1-1 Namiki, Tsukuba 305-0044, JPN)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 101  Issue： 15  Page： 152101-152101-4  Publication year： Oct. 08, 2012 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *thermoelectric effect ,  *boride ,  yttrium compound ,  aluminum compound ,  compound semiconductor ,  electrical conductivity ,  hopping conduction ,  concentration dependence ,  transport coefficient ,  *PN junction ,  crystal structure ,  X-Ray Diffraction ,  Seebeck coefficient
Semi thesaurus term： variable range hopping

JST classification (2)： Electric conduction in crystalline semiconductors  (BM03043X) ,  Semiconductor-semiconductor contacts without Gr.13-15 element compounds  (BM03083P)

Terms in the title (2)： 温熱 ,  ホウ化物