Effect of Temperature and Humidity on NO<sub>2</sub> and NH<sub>3</sub> Gas Sensitivity of Bottom-Gate Graphene FETs Prepared by ICP-CVD

KIM Chang-Hee; YOO Sung-Won; NAM Dong-Woo; SEO Sunae; LEE Jong-Ho

Art

J-GLOBAL ID：201202288908546092 Reference number：12A1037279

Effect of Temperature and Humidity on NO₂ and NH₃ Gas Sensitivity of Bottom-Gate Graphene FETs Prepared by ICP-CVD

ICP-CVDで製作したボトムゲートグラフェンFETsのNO₂とNH₃ガス感度に対する温度と湿度の影響

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Volume： 33 Issue： 7 Page： 1084-1086 Publication year： Jul. 2012
JST Material Number： B0344B ISSN： 0741-3106 CODEN： EDLEDZ Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Effect of Temperature and Humidity on NO2 and NH3 Gas Sensitivity of Bottom-Gate Graphene FETs Prepared by ICP-CVD

Effect of Temperature and Humidity on NO₂ and NH₃ Gas Sensitivity of Bottom-Gate Graphene FETs Prepared by ICP-CVD