Art

J-GLOBAL ID：201202289005875126   Reference number：12A0593608

Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition

パルスレーザ蒸着による酸化ガリウム薄膜の成長とエッチング特性

Author (9)： OU Sin-liang (Dep. of Materials Sci. and Engineering, National Chung Hsing Univ., Taichung 40227, Taiwan, TWN) ,  WUU Dong-sing (Dep. of Materials Sci. and Engineering, National Chung Hsing Univ., Taichung 40227, Taiwan, TWN) ,  WUU Dong-sing (Dep. of Materials Sci. and Engineering, Da-Yeh Univ., Changhua 51591, Taiwan, TWN) ,  FU Yu-chuan (Inst. of Precision Engineering, National Chung Hsing Univ., Taichung 40227, Taiwan, TWN) ,  LIU Shu-ping (Inst. of Precision Engineering, National Chung Hsing Univ., Taichung 40227, Taiwan, TWN) ,  HORNG Ray-hua (Inst. of Precision Engineering, National Chung Hsing Univ., Taichung 40227, Taiwan, TWN) ,  HORNG Ray-hua (Dep. of Electro-Optical Engineering, National Cheng Kung Univ., Tainan 70101, Taiwan, TWN) ,  LIU Lei (Inst. of Photonics & Optoelectronics, and Dep. of Electrical Engineering, National Taiwan Univ., Taipei 10617 ...) ,  FENG Zhe-chuan (Inst. of Photonics & Optoelectronics, and Dep. of Electrical Engineering, National Taiwan Univ., Taipei 10617 ...)
Material： Materials Chemistry and Physics  (Mater Chem Phys)
Volume： 133  Issue： 2-3  Page： 700-705  Publication year： Apr. 16, 2012 
JST Material Number： E0934A  ISSN： 0254-0584  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： transmissivity ,  excimer laser ,  *laser deposition ,  *gallium oxide ,  *thin film ,  *thin film growth ,  *etching ,  *substrate (plate) ,  substrate temperature ,  X-Ray Diffraction ,  atomic force microscope ,  X-ray photoelectron spectroscopy ,  structural property ,  optical property ,  amorphous state ,  polycrystal ,  phase transition ,  temperature dependence ,  absorption edge ,  band gap ,  crystallinity ,  machining speed ,  *pulsed laser deposition ,  light transmission ,  *sapphire substrate ,  Hydrofluoric Acid ,  ultraviolet radiation region ,  KrF laser
Semi thesaurus term： KrF excimer laser ,  *chemical etching ,  optical characteristics ,  etch rate

JST classification (3)： Bases,metal oxides  (CD01030Z) ,  Oxide thin films  (BK14050P) ,  Manufacturing technology of solid-state devices  (NC03030V)

Terms in the title (5)： パルスレーザ蒸着 ,  酸化ガリウム ,  薄膜 ,  成長 ,  エッチング特性