Rchr
J-GLOBAL ID：201301052925309533
Update date: Jul. 05, 2022
Tamba Nobuo
タンバ ノブオ | Tamba Nobuo
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Research field (2)：
Computer systems
, Electronic devices and equipment
Research keywords (5)：
VLSI Design system
, High-speed transmission
, Low power dissipation
, Semiconductor device
, Integrated circuit
Papers (3)：
Y Yokoyama, N Itoh, M Hasegawa, M Katayama, H Akasaki, N Kaneda, T Ueda, Y Tanaka, E Yamasaki, M Todokoro, et al. A 1.8-V embedded 18-Mb DRAM macro with a 9-ns RAS access time and memory-cell area efficiency of 33%. IEEE JOURNAL OF SOLID-STATE CIRCUITS. 2001. 36. 3. 503-509
K OHHATA, Y SAKURAI, H NAMBU, K KANETANI, Y IDEI, T HIRAMOTO, N TAMBA, K YAMAGUCHI, M ODAKA, K WATANABE, et al. NOISE-REDUCTION TECHNIQUES FOR A 64-KB ECL-CMOS SRAM WITH A 2-NS CYCLE TIME. IEICE TRANSACTIONS ON ELECTRONICS. 1993. E76C. 11. 1611-1619
H NAMBU, K KANETANI, Y IDEI, N HOMMA, K YAMAGUCHI, T HIRAMOTO, N TAMBA, M ODAKA, K WATANABE, T IKEDA, et al. HIGH-SPEED SENSING TECHNIQUES FOR ULTRAHIGH-SPEED SRAMS. IEEE JOURNAL OF SOLID-STATE CIRCUITS. 1992. 27. 4. 632-640
MISC (1)：
H ISHIUCHI, N TAMBA, JD SHOTT, CJ KNORR, SS WONG. HOT-ELECTRON-INDUCED MINORITY-CARRIER GENERATION IN BIPOLAR JUNCTION TRANSISTORS. IEEE ELECTRON DEVICE LETTERS. 1990. 11. 11. 490-492
Lectures and oral presentations (3)：
A 1.5 ns 256 kb BiCMOS SRAM with 11 k 60 ps logic gates
(International Solid State Circuit Conference 1993)
A closed-form analysis of f T for the bipolar transistor down to liquid nitrogen temperature
(International Electron Devices Meeting 1989)
An 8 ns 256 K BiCMOS RAM
(International Solid State Circuit Conference 1988)
Association Membership(s) (5)：
日本人工知能学会
, 計測自動制御学会
, 自動車技術会
, THE PHYSICAL SOCIETY OF JAPAN
, IEEE
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