Art

J-GLOBAL ID：201302202874298480   Reference number：13A0249915

Enhanced hole concentration through Ga doping and excess of Mg and thermoelectric properties of p-type Mg_2(1+z)(Si_0.3Sn_0.7)_1-y Ga _y

p型Mg_2(1+z)(Si_0.3Sn_0.7)_1-yGa_yのGaドーピングと過剰なMgによる増進したホール濃度と熱電特性

Author (7)： LIU Wei (State Key Lab. of Advanced Technol. for Materials Synthesis and Processing, Wuhan Univ. of Technol., Wuhan 430070, CHN) ,  YIN Kang (State Key Lab. of Advanced Technol. for Materials Synthesis and Processing, Wuhan Univ. of Technol., Wuhan 430070, CHN) ,  SU Xianli (State Key Lab. of Advanced Technol. for Materials Synthesis and Processing, Wuhan Univ. of Technol., Wuhan 430070, CHN) ,  LI Han (State Key Lab. of Advanced Technol. for Materials Synthesis and Processing, Wuhan Univ. of Technol., Wuhan 430070, CHN) ,  YAN Yonggao (State Key Lab. of Advanced Technol. for Materials Synthesis and Processing, Wuhan Univ. of Technol., Wuhan 430070, CHN) ,  TANG Xinfeng (State Key Lab. of Advanced Technol. for Materials Synthesis and Processing, Wuhan Univ. of Technol., Wuhan 430070, CHN) ,  UHER Ctirad (Dep. of Physics, Univ. of Michigan, Ann Arbor, MI 48109, USA)
Material： Intermetallics
Volume： 32  Page： 352-361  Publication year： Jan. 2013 
JST Material Number： W0672A  ISSN： 0966-9795  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *tin base alloy ,  magnesium additive alloy ,  silicon containing alloy ,  gallium additive alloy ,  *thermoelectric material ,  thermal conductivity ,  transport coefficient ,  electrical conductivity ,  carrier density ,  alloying element ,  Seebeck coefficient ,  hole concentration
Semi thesaurus term： hole concentration

JST classification (1)： Electrical properties  (WB02010Y)

Terms in the title (5)： Ga ,  ドーピング ,  Mg ,  ホール濃度 ,  熱電特性