Art
J-GLOBAL ID:201302209118368801   Reference number:13A0215434

Compensation effect of donor and acceptor impurities co-doping on the electrical properties of directionally solidified multicrystalline silicon ingots

一方向凝固多結晶質シリコンインゴットの電気的特性に対するドナーおよびアクセプター不純物共ドーピングの補償効果
Author (4):
Material:
Volume: 311  Issue:Page: 773-775  Publication year: 2009 
JST Material Number: O2133A  ISSN: 0022-0248  Document type: Article
Country of issue: Other (ZZZ)  Language: ENGLISH (EN)

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