Art

J-GLOBAL ID：201302221227110229   Reference number：13A0312851

Voltage detector for low voltage detection

低電圧検出可能な電圧検出器

Author (2)： KOBAYASHI YUTA (明治大) ,  SEKINE KAORI (明治大)
Material： 電気学会電子回路研究会資料  (電気学会研究会資料)
Volume： ECT-13  Issue： 1-16.18-19.22-25  Page： 49-53  Publication year： Jan. 24, 2013 
JST Material Number： X0578A  Document type： Proceedings
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： *sensor ,  *voltage ,  absolute temperature ,  voltage generation ,  temperature dependence ,  logic circuit ,  threshold ,  *electronic equipment
Semi thesaurus term： CMOS inverter ,  subthreshold ,  reference voltage ,  *electrical low voltage ,  *voltage sensor

JST classification (2)： Measuring methods and instruments of current,voltage,charge  (AD07020C) ,  Electronic circuits in general  (NC05010N)

Reference (6)：

• (1) K.Okada and K.Sekine "Low Temperature Dependance CMOS-Inverter Voltage Detector with PTAT Voltage Generator under Ultra Low Power Supply", The Papers of Technical Meeting on Electronic Circuits, IEE Japan, ECT-10-52, Jun. 2010.
• (2) M.Morii, H.Takakubo and K.Takakubo "On Temperature Dependency of a Power Supply Voltage Detector Using CMOS Inverter", The Papers of Technical Meeting on Electronic Circuits, IEE Japan, ECT-10-11, Jan. 2010
• (3) K.Takakubo, T.Eto and H.Takakubo:"Analysis and Modeling of Leakage Current for four-terminal MOSFET in OFF-State and Low Loakage Switches ", IEICE TRANS. FUNDAMENTALS, VOL.E92-A, NO.2 FEBRUARY 2009
• (4) T. Fujii and K.Sekine "A study on gate voltage degradation coefficient on MOSFET operating in subthreshold region," 2012 Annual Conference of Electronics and Systems Society,I.E.E. of Japan.,GS12-3, September 2012.
• (5) N.Yasuda and K.Sekine "A study on temperature dependence of the parameters I0 of MOSFET operating in subthreshold regio" 2012 Annual Conference of Electronics and Systems Society,I.E.E. of Japan.,GS12-1, September 2012.

Terms in the title (2)： 低電圧 ,  電圧検出器