Art

J-GLOBAL ID：201302231962203511   Reference number：13A1283219

MBE grown Ga₂O₃ and its power device applications

MBE成長Ga₂O₃およびそのパワー素子応用

Author (7)： SASAKI Kohei (Tamura Corp., 2-3-1 Hirosedai, Sayama, Saitama 350-1328, JPN) ,  SASAKI Kohei (National Inst. of Information and Communications Technol., 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, JPN) ,  HIGASHIWAKI Masataka (National Inst. of Information and Communications Technol., 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, JPN) ,  HIGASHIWAKI Masataka (PRESTO, Japan Sci. and Technol. Agency (JST), 7 Gobancho, Chiyoda, Tokyo 102-0075, JPN) ,  KURAMATA Akito (Tamura Corp., 2-3-1 Hirosedai, Sayama, Saitama 350-1328, JPN) ,  MASUI Takekazu (Koha Co., Ltd., 2-6-8 Kouyama, Nerima, Tokyo 176-0022, JPN) ,  YAMAKOSHI Shigenobu (Tamura Corp., 2-3-1 Hirosedai, Sayama, Saitama 350-1328, JPN)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 378  Page： 591-595  Publication year： Sep. 01, 2013 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 短報  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： compound semiconductor ,  *gallium oxide ,  *semiconductor thin film ,  *MBE growth ,  semiconductor device ,  *MESFET ,  crystal orientation ,  optical microscopy ,  interference microscope ,  doping ,  tin ,  concentration dependence ,  Schottky barrier diode ,  current-voltage characteristic ,  RHEED ,  carrier density ,  temperature dependence ,  differential interference microscope
Semi thesaurus term： Nomarski type differential-interference microscope ,  power device

JST classification (2)： Semiconductor thin films  (BK14040E) ,  Transistors  (NC03070N)

Terms in the title (4)： MBE成長 ,  Ga2O3 ,  パワー素子 ,  応用