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J-GLOBAL ID:201302237536515946   Reference number:13A0536472

Light penetration depth dependence of photocarrier life time and the Hall effect in phosphorous-doped and boron-doped homoepitaxial CVD diamond films

リンドープおよびホウ素ドープホモエピタキシャルCVDダイヤモンド膜における光キャリア寿命およびHall効果の光侵入深さ依存性
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Volume: 33  Page: 49-53  Publication year: Mar. 2013 
JST Material Number: W0498A  ISSN: 0925-9635  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Thin films of other inorganic compounds  ,  Photoconduction,photoelectromotive force 
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