Art
J-GLOBAL ID：201302247904131709   Reference number：13A0758287

Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates

三元InGaN基板上のInGaN量子井戸の利得とレーザ特性
Author (2)：
ZHANG Jing

About ZHANG Jing

(Lehigh Univ., PA, USA)

About Lehigh Univ., PA, USA

, 
TANSU Nelson

About TANSU Nelson

(Lehigh Univ., PA, USA)

About Lehigh Univ., PA, USA


Material：
Annual Meeting of the IEEE Photonics Society  (IEEE Photonics Conference)

About Annual Meeting of the IEEE Photonics Society


Volume： 2012  Page： 604-605  Publication year： 2012 
JST Material Number： T0931A  ISSN： 1092-8081  Document type： Proceedings
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
*indium compound

About indium compound

, 
*gallium compound

About gallium compound

, 
*nitride

About nitride

, 
compound semiconductor

About compound semiconductor

, 
*quantum well laser

About quantum well laser

, 
gain

About gain


Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
*InGaN

About InGaN

, 
ternary semiconductor

About ternary semiconductor

, 
optical gain

About optical gain


JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor lasers 
(BD04070L)

About Semiconductor lasers

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
InGaN

About InGaN

, 
量子井戸

About 量子井戸

, 
利得

About 利得

, 
レーザ

About レーザ


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