Art

J-GLOBAL ID：201302266216586993   Reference number：13A0994189

Degradation Analysis of Semiconductor Optical Devices and Suppression of Degradation

半導体発光デバイスの劣化解析と劣化抑制

Author (1)： UEDA OSAMU (金沢工業大学大学院工学研究科高信頼ものづくり専攻)
Material： Fundamentals Review (Web)  (Fundam Rev (Web))
Volume： 6  Issue： 4  Page： 294-304 (J-STAGE)  Publication year： 2013 
JST Material Number： U0221A  ISSN： 1882-0875  Document type： Article
Article type： 解説  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： *light emitting diode ,  *semiconductor laser ,  *gradual failure ,  *fault diagnosis ,  dislocation(crystal) ,  point defect ,  recombination (connection) ,  transmission electron microscope ,  compound semiconductor ,  multilayer film ,  *light-emitting device ,  lattice defect
Semi thesaurus term： *light-emitting device ,  non-radiative recombination

JST classification (2)： Light emitting devices  (NC03082G) ,  Measurement,testing and reliability of solid-state devices  (NC03040G)

Reference (25)：

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• (2)M. Ikeda,O. Ueda, S. Komiya, and I Umebu,“Thermal strain-induced degradation mechanism in the visible AlGaAs/GaAs laser,”J. Appl. Phys., vol.58,no.7, pp.2448-2452, Oct. 1985.
• (3)S. Guha, J. M. DePuydt, M. A. Haase, J. Qui, and H. Cheng, “Degradation of II-VI based blue-green light emitters,”Appl. Phys. Lett. , vol.63, no.23, pp.3107-3109, Dec. 1993.
• (4)S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, “InGaN-based multi-quantum-well-structure laser diodes,”Jpn. J. Appl. Phys., vol.35, Part2, no.1B, pp.L74-L76, Jan. 1996.
• (5)O. Ueda, “Degradation of III-V opto-electronic devices,”J. Electrochem. Soc., vol.135, no.1, pp.11C-22C, Jan. 1988.

Terms in the title (3)： 半導体発光デバイス ,  解析 ,  劣化抑制