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J-GLOBAL ID：201302280696166304   Reference number：13A1594032

Evaluation of potential variations around grain boundaries in BaSi₂ epitaxial films by Kelvin probe force microscopy

Kelvinプローブ力顕微鏡によるBaSi₂エピタキシャル膜における結晶粒界の近傍のポテンシャル変動の評価

Author (9)： BABA Masakazu (Inst. of Applied Physics, Univ. of Tsukuba, Ibaraki 305-8573, JPN) ,  TSUREKAWA Sadahiro (Graduate School of Sci. and Technol., Kumamoto Univ., Kumamoto 860-8555, JPN) ,  WATANABE Kentaro (Inst. of Applied Physics, Univ. of Tsukuba, Ibaraki 305-8573, JPN) ,  DU W. (Inst. of Applied Physics, Univ. of Tsukuba, Ibaraki 305-8573, JPN) ,  TOKO Kaoru (Inst. of Applied Physics, Univ. of Tsukuba, Ibaraki 305-8573, JPN) ,  HARA Kosuke O. (Graduate School of Engineering, Nagoya Univ., Chikusa-ku, Nagoya 464-8603, JPN) ,  USAMI Noritaka (Graduate School of Engineering, Nagoya Univ., Chikusa-ku, Nagoya 464-8603, JPN) ,  SEKIGUCHI Takashi (National Inst. for Materials Sci., Ibaraki 305-0044, JPN) ,  SUEMASU Takashi (Inst. of Applied Physics, Univ. of Tsukuba, Ibaraki 305-8573, JPN)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 103  Issue： 14  Page： 142113-142113-4  Publication year： Sep. 30, 2013 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： force microscope ,  *silicide ,  *barium compound ,  epitaxy ,  compound semiconductor ,  *semiconductor thin film ,  MBE growth ,  substrate (plate) ,  silicon ,  potential barrier ,  photoconductivity ,  transmission electron microscope ,  electron microscopy ,  atomic force microscope ,  Microscopy ,  grain boundary ,  Kelvin probe force microscope ,  *barium silicide

JST classification (2)： Semiconductor thin films  (BK14040E) ,  Electronic structure of surfaces  (BM02080J)

Terms in the title (6)： Kelvinプローブ力顕微鏡 ,  エピタキシャル膜 ,  結晶粒界 ,  近傍 ,  ポテンシャル ,  評価