Art
J-GLOBAL ID:201302295439939243
Reference number:13A1490670
Low Driving Voltage and High Mobility Ambipolar Field-Effect Transistors with PbS Colloidal Nanocrystals
PbSコロイドナノ結晶による低駆動電圧および高移動度両極性電界効果トランジスタ
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Author (5):
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Material:
Volume:
25
Issue:
31
Page:
4309-4314
Publication year:
Aug. 21, 2013
JST Material Number:
W0001A
ISSN:
0935-9648
CODEN:
ADVMEW
Document type:
Article
Article type:
短報
Country of issue:
Germany, Federal Republic of (DEU)
Language:
ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
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JST classification (3):
JST classification
Category name(code) classified by JST.
Solid-solid interface
, Colloid chemistry in general
, Transistors
Substance index (4):
Substance index
Chemical Substance indexed to the Article.
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Terms in the title (7):
Terms in the title
Keywords automatically extracted from the title.
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