Rchr
J-GLOBAL ID：201401006813709992
Update date: Oct. 01, 2022
Nagasawa Hiroyuki
Nagasawa Hiroyuki
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Research keywords (3)：
Semiconductor Devices
, Crystal Growth
, SiC
MISC (16)：
長澤弘幸. パワーエレクトロニクスの発展を担うSiC. CISTEC Journal 安全保障貿易情報センター. 2016. 161. 99-116
Hiroyuki Nagasawa. パワーエレクトロニクスの発展を担うSiC. CISTEC Journal,安全保障貿易情報センター. 2016. 161. 99-116
Sai Jiao, Yuya Murakami, Hiroyoki Nagasawa, Hirokazu Fukidome, Isao Makabe, Yasunori Tateno, Takashi Nakabayashi, Maki Suemitsu. High quality graphene formation on 3C-SiC/4H-AIN/Si heterostructure. Materials Science Forum. 2015. 806. 89-93
Sai Jiao, Yuya Murakami, Hiroyoki Nagasawa, Hirokazu Fukidome, Isao Makabe, Yasunori Tateno, Takashi Nakabayashi, Maki Suemitsu. High quality graphene formation on 3C-SiC/4H-AIN/Si heterostructure. Materials Science Forum. 2015. 806. 89-93
Hiroyuki Nagasawa, Ramya Gurunathan, Maki Suemitsu. Controlling planar defects in 3C-SiC: Ways to wake it up as a practical semiconductor. Materials Science Forum. 2015. 821-823. 108-114
ｍore...
Lectures and oral presentations (22)：
Si(110)上3C-SiC(111)薄膜の結晶方位回転成長機構
(第76回応用物理学会秋季学術講演会 2015)
Si(110)上3C-SiC(111)薄膜の結晶方位回転成長機構
(第76回応用物理学会秋季学術講演会 2015)
SiCエピタキシャル成長技術と ポリタイプ積層
(第45回結晶成長国内会議(NCCG-45) 2015)
SiCエピタキシャル成長技術と ポリタイプ積層
(第45回結晶成長国内会議(NCCG-45) 2015)
What is 'Killer Defect' in 3C-SiC
(IUMRS-ICA 2014)
ｍore...
Professional career (1)：
工学博士 (東海大学)
Work history (1)：
Tohoku University Research Institute of Electrical Communication Researcher
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