Rchr
J-GLOBAL ID：201401050622372563
Update date: Mar. 30, 2024
Matys Maciej
Matys Maciej
Affiliation and department：
Homepage URL (1)：
https://www.fujitsu.com
Research field (1)：
Semiconductors, optical and atomic physics
Research keywords (5)：
GAN-based optoelectronics / UV photodetectors
, GAN -based transistors
, Physics
, Electrical and electronic engineering
, Applied physics
Research theme for competitive and other funds (4)：
- 2020 - 2023 Mg-implanted Vertical GaN Junction Barrier Schottky Rectifiers
- Mg implanted edge termination structure for GaN power device applications
- Innovative technologies of multifunctional materials and structures for nanoelectronics,photonics, spintronics, and sensor structures (InTechFun)
- Highly Safe GaN Metal-Oxide-Semiconductor Transistor Switch
Papers (24)：
-
Maciej Matys, Kazuki Kitagawa, Tetsuo Narita, Tsutomu Uesugi, Michal Bockowski, Jun Suda, Tetsu Kachi. Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation. Japanese Journal of Applied Physics. 2023. 62. SN0801
-
Maciej Matys, Kazuki Kitagawa, Tetsuo Narita, Tsutomu Uesugi, Jun Suda, Tetsu Kachi. Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage. 2022. 121. 20
-
Tetsu Kachi, Tetsuo Narita, Hideki Sakurai, Maciej Matys, Keita Kataoka, Kazufumi Hirukawa, Kensuke Sumida, Masahiro Horita, Nobuyuki Ikarashi, Kacper Sierakowski, et al. Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing. 2022. 132. 13
-
Ali Baratov, Shinsaku Kawabata, Shun Urano, Itsuki Nagase, Masaki Ishiguro, Shogo Maeda, Takahiro Igarashi, Toi Nezu, Zenji Yatabe, Maciej Matys, et al. Evidence of reduced interface states in Al2O3/AlGaN MIS structures via insertion of ex-situ regrown AlGaN layer. Applied Physics Express. 2022. 15. 10. 5
-
Maciej Matys, Takashi Ishida, Kyung Pil Nam, Hideki Sakurai, Keita Kataoka, Tetsuo Narita, Tsutomu Uesugi, Michal Bockowski, Tomoaki Nishimura, Jun Suda. Design and demonstration of nearly-ideal edge termination for GaN p-n junction using Mg-implanted field limiting rings. Applied Physics Express. 2021. 14. 7. 074002
ｍore...
Patents (1)：
-
Mg implanted bevel edge termination structure for GaN power device applications
Lectures and oral presentations (31)：
-
Design and Fabrication of Vertical GaN Junction Barrier Schottky Diodes Using Selective Ion Implantation Technology
(15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 16th International Conference on Plasma-Nano Technology & Science (ISPlasma2023/IC-PLANTS2023)March 05 - March 09, 2023 2023)
-
Recent development of GaN Power switching devices with Ion Implantation technology
(SPIE Photonics West 2023, San Francisco, California, United States 2023)
-
Mg-implanted vertical GaN junction barrier Schottky diodes with low on-resistance, high breakdown voltage, low turn-on voltage and avalanche capability
(International Workshop on Nitride Semiconductors 2022, Berlin 2022)
-
Analysis of temperature dependent frequency dispersion in C-V curves of Al2O3/AlGaN/GaN structures based on the disorder-induced gap-state model
(12th Topical Workshop on Heterostructure Microelectronics Kirishima, Kyushuu, Japan 2017)
-
Characterization of Interface States from Frequency Dispersion in Capacitance-Voltage Curves of Al2O3/AlGaN/GaN Heterostructures
(International Workshop on Nitride Semiconductors (IWN 2016) 2 Aug 2016 Orlando, Florida 2016)
ｍore...
Education (3)：
- 2009 - 2014 Ph.D. in Physics, University of Silesia in Katowice, 2014
- 2012 - 2013 Postgraduate studies in Nuclear Power Engineering / Nuclear Power Plant Security Systems ,Warsaw University of Technology
- 2004 - 2009 M.Sc. in Physics, AGH University of Science and Technology 2009
Professional career (1)：
Work history (5)：
- 2023/04 - 現在 Fujitsu Laboratories ltd., Atsugi
- 2019/02 - 2023/03 Nagoya University Institute of Materials and Systems for Sustainability Assistant Professor
- 2017/10 - 2019/01 Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University Specially Appointed Assistant Professor
- 2014/10 - 2017/10 Postdoctoral Fellow, Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
- 2008 - 2010 AGH University of Science and Technology in Cracow: Lecture in Number Theory and Cryptography
Awards (2)：
- 2023/12 - Institute of Physics (IOP) IOP Trusted Reviewer Status Award
- 2017 - Editor’s Pick, Journal of Applied Physics, 2017.
Association Membership(s) (2)：
Member of the Polish Physical Society
, Member of Japan Society of Applied Physics (JSAP)
