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J-GLOBAL ID：201401099780807835   Update date: Apr. 22, 2024

Uedono Akira

ウエドノ アキラ | Uedono Akira
Affiliation and department：
University of Tsukuba Faculty of Pure and Applied Sciences

About University of Tsukuba Faculty of Pure and Applied Sciences


Job title： Professor
Research theme for competitive and other funds  (26)：
  • 2021 - 2025 A study of the activation mechanism of implanted impurities and control of point defect in group III nitrides
  • 2021 - 2024 Effective use of characteristics of Bi-based III-V compound semiconductors by controlling point defects density inside their crystals grown at low temperatures
  • 2021 - 2023 ナノ空隙検出のためのサブミリメートル空間分解能を有する陽電子消滅装置の開発
  • 2020 - 2023 Study of thick GaN crystals with low-dislocation density by the vapor phase epitaxy with an oxide gallium source
  • 2020 - 2023 Growth of a thick GaN crystal with extremely low resistivity by the OVPE method
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Papers (589)：
  • Akira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Shigefusa F. Chichibu, Jun Uzuhashi, Tadakatsu Ohkubo, Shoji Ishibashi, et al. Vacancy-Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion-Implanted GaN Studied by Positron Annihilation. physica status solidi (b). 2024
  • K. Shima, R. Tanaka, S. Takashima, K. Ueno, M. Edo, A. Uedono, S. Ishibashi, and, S. F. Chichibu. Temporary and spatially resolved luminescence studies of p-GaN segments fabricated by vacancy-guided redistribution of Mg using sequential ion implantation of Mg and N. Proceedings of IWJT2023: IEEE Xplore Digital Library (2023). 2023. 1-4
  • Uedono, A., Kimura, Y., Hoshii, T., Kakushima, K., Sumiya, M., Tsukui, M., Miyano, K., Mizushima, I., Yoda, T., Tsutsui, K. Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam. Journal of Applied Physics. 2023. 133. 22
  • Harashima, Y, Koga, H, Ni, Z, Yonehara, T, Katouda, M, Notake, A, Matsui, H, Moriya, T, Si, M. K, Hasunuma, R, et al. Finite temperature effects on the structural stability of Si-doped HfO2 using first-principles calculations. APPLIED PHYSICS LETTERS. 2023. 122. 26
  • Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, et al. Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam. Gallium Nitride Materials and Devices XVIII. 2023
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MISC (62)：
  • 秩父重英, 嶋紘平, 小島一信, MOODY Baxter, 三田清二, COLLAZO Ramon, SITAR Zlatko, SITAR Zlatko, 熊谷義直, 上殿明良. Luminescent properties of Si-doped AlN substrates grown by HVPE on freestanding AlN. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
  • 嶋紘平, 田中亮, 高島信也, 上野勝典, 江戸雅晴, 小島一信, 上殿明良, 秩父重英, 秩父重英. Luminescence studies of p-type Mg-implanted GaN using vacancy-guided Mg diffusion. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
  • LI Liyang, 嶋紘平, 山中瑞樹, 小島一信, 江川孝志, 上殿明良, 石橋章司, 竹内哲也, 三好実人, 秩父重英. Characterization of optical properties of c-plane Al0.83In0.17N/GaN lattice-matched heterostructures. 電子情報通信学会技術研究報告(Web). 2021. 121. 259(ED2021 15-36)
  • 上殿明良, 田中亮, 高島信也, 上野勝典, 江戸雅晴, 嶋紘平, 小島一信, 秩父重英, 石橋章司. Study of Mg activation process in Mg-implanted GaN by means of positron annihilation. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
  • 嶋紘平, 田中亮, 高島信也, 上野勝典, 江戸雅晴, 小島一信, 上殿明良, 秩父重英. Spatially resolved CL of p-type ion-implanted GaN using vacancy-guided Mg diffusion. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
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Books (8)：
  • 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12)
    IOP PUBLISHING LTD 2011
  • GALLIUM NITRIDE MATERIALS AND DEVICES VI
    SPIE-INT SOC OPTICAL ENGINEERING 2011 ISBN:9780819484765
  • PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE
    IEEE 2009 ISBN:9781424444915
  • Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10
    WILEY-V C H VERLAG GMBH 2007
  • Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2
    IEEE 2006 ISBN:1424400163
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Lectures and oral presentations  (47)：
  • Defect Studies of ZnFe2O4/MWCNT by Positron Annihilation Lifetime and Doppler Broadening Spectroscopy
    (7th International Conference on Nano science and Nanotechnology (ICONN-2023))
  • Electrical properties of silicon-implanted alpha-Al2O3
    (The 4th International Workshop on Gallium Oxide and Related Materials 2022)
  • Positron Annihilation Studies on MWCNT/MnFe2O4 Nanocomposites
    (19th International Conference on Positron Annihilation (ICPA-19))
  • Investigation on vacancy type defects in Fe doped SrSnO3 perovskite nanostructures by Positron annihilation spectroscopy
    (International Workshop on Positron Studies of Defects 2020 (PSD-20))
  • Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors
    (Conference on Gallium Nitride Materials and Devices XV 2020)
ｍore...
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