Art
J-GLOBAL ID:201402202076633367   Reference number:14A0910919

Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2V Open-Circuit Voltage in Cuprous Oxide Solar Cells

原子層堆積による酸化ガリウム緩衝層は亜酸化銅太陽電池に1.2V開回路起電力を可能にする
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Material:
Volume: 26  Issue: 27  Page: 4704-4710  Publication year: Jul. 16, 2014 
JST Material Number: W0001A  ISSN: 0935-9648  CODEN: ADVMEW  Document type: Article
Article type: 短報  Country of issue: Germany, Federal Republic of (DEU)  Language: ENGLISH (EN)
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Oxide thin films  ,  Solid-solid interface  ,  Solar cell 
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