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J-GLOBAL ID:201402204372034684   Reference number:14A0226511

High-Speed Switching Method of MOSFETs Using Switching Assist Auxiliary Circuit

スイッチングアシスト補助回路を用いたMOSFETの高速スイッチング法
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Volume: 133  Issue: 12  Page: 1186-1192 (J-STAGE)  Publication year: 2013 
JST Material Number: X0451A  ISSN: 0913-6339  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Power converters 
Reference (14):
  • (1) T. Noguchi, S. Yajima, and H. Komatsu: “Development of Gate Drive Circuit for Next-Generation Ultra High-Speed Switching Devices”, IEEJ Trans. IA, Vol. 129, No. 1, pp. 46-52 (2009) (in Japanese)
  • 野口季彦・矢島哲志・小松宏禎:「次世代超高速スイッチング素子ゲート駆動回路の開発」, 電学論D, Vol. 129, No. 1, pp. 46-52 (2009)
  • (2) M. Ishigaki and H. Fujita: “A Resonant Gate-Drive Circuit Capable of High-Frequency and High-Efficiency Operation”, IEEJ Trans. IA, Vol. 127, No. 10, pp. 1090-1096 (2007) (in Japanese)
  • 石垣将紀・藤田英明:「低損失・高周波動作可能なMOSFET用共振形ゲートドライブ回路」, 電学論D,Vol. 127, No. 10, pp. 1090-1096 (2007)
  • (3) R. W. De Doncker and J. P. Lyons: “The Auxiliary Resonant Commutated Pole Converter”, Conf. Rec. of the IEEE-IAS Annual Meeting, Vol. 2, pp. 1228-1235 (1990)
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