Art

J-GLOBAL ID：201402216703112883   Reference number：14A0951115

Competition of optical transitions between direct and indirect bandgaps in Ge_1-xSn_x

Ge_1-xSn_xの直接及び間接バンドギャップの間の光学遷移の競合

Author (11)： DU Wei (Dep. of Electrical Engineering, Univ. of Arkansas, Fayetteville, Arkansas 72701, USA) ,  GHETMIRI Seyed A. (Dep. of Electrical Engineering, Univ. of Arkansas, Fayetteville, Arkansas 72701, USA) ,  CONLEY Benjamin R. (Dep. of Electrical Engineering, Univ. of Arkansas, Fayetteville, Arkansas 72701, USA) ,  MOSLEH Aboozar (Dep. of Electrical Engineering, Univ. of Arkansas, Fayetteville, Arkansas 72701, USA) ,  NAZZAL Amjad (Electrical Engineering and Physics Dep., Wilkes Univ., Wilkes-Barre, Pennsylvania 18766, USA) ,  SOREF Richard A. (Dep. of Physics, Univ. of Massachusetts Boston, Boston, Massachusetts 02125, USA) ,  SUN Greg (Dep. of Physics, Univ. of Massachusetts Boston, Boston, Massachusetts 02125, USA) ,  TOLLE John (ASM, 3440 East Univ. Drive, Phoenix, Arizona 85034, USA) ,  MARGETIS Joe (ASM, 3440 East Univ. Drive, Phoenix, Arizona 85034, USA) ,  NASEEM Hameed A. (Dep. of Electrical Engineering, Univ. of Arkansas, Fayetteville, Arkansas 72701, USA) ,  YU Shui-qing (Dep. of Electrical Engineering, Univ. of Arkansas, Fayetteville, Arkansas 72701, USA)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 105  Issue： 5  Page： 051104-051104-4  Publication year： Aug. 04, 2014 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： band gap ,  photoluminescence ,  tin containing alloy ,  *germanium base alloy ,  *electronic transition ,  *emission spectrum ,  temperature dependence ,  semiconductor material ,  indirect band gap ,  *optical transition ,  direct band gap

JST classification (1)： Luminescence of semiconductors  (BM08092S)

Terms in the title (3)： 間接バンドギャップ ,  光学遷移 ,  競合