Art
J-GLOBAL ID:201402217392088564   Reference number:14A0413243

Radiation tolerance of Si1-yCy source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations

異なる炭素濃度のSi1-yCyのソース/ドレインn型金属酸化膜半導体電界効果トランジスタの放射線耐性
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Material:
Volume: 557  Page: 307-310  Publication year: Apr. 30, 2014 
JST Material Number: B0899A  ISSN: 0040-6090  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Category name(code) classified by JST.
Transistors 

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