Art

J-GLOBAL ID：201402228466675574   Reference number：14A1499429

Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

シリコンプラズマエッチング中の表面粗化の二つのモード イオン化されたエッチング生成物の役割

Author (5)： NAKAZAKI Nobuya (Dep. of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto Univ., Kyoto-daigaku Katsura ...) ,  TSUDA Hirotaka (Dep. of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto Univ., Kyoto-daigaku Katsura ...) ,  TAKAO Yoshinori (Dep. of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto Univ., Kyoto-daigaku Katsura ...) ,  ERIGUCHI Koji (Dep. of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto Univ., Kyoto-daigaku Katsura ...) ,  ONO Kouichi (Dep. of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto Univ., Kyoto-daigaku Katsura ...)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 116  Issue： 22  Page： 223302-223302-20  Publication year： Dec. 14, 2014 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： wafer ,  *silicon ,  *plasma etching ,  plasma source ,  *inductively coupled plasma ,  *chlorine ,  surface treatment ,  *surface roughness ,  electric power ,  energy dependence ,  flow rate ,  substrate temperature ,  machining time ,  bias ,  radiation flux ,  plasma diagnostics ,  computer simulation
Semi thesaurus term： gas flow rate ,  silicon substrate ,  power dependence ,  input energy ,  ion flux ,  Monte Carlo simulation ,  Molecular Dynamics Simulation

JST classification (1)： Manufacturing technology of solid-state devices  (NC03030V)

Terms in the title (7)： シリコン ,  プラズマエッチング ,  表面粗化 ,  イオン化 ,  エッチング ,  生成物 ,  役割