Art

J-GLOBAL ID：201402236646364340   Reference number：14A0413223

A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operation

低炭素ドープGaN層の複数の欠陥状態とそのAlGaN/GaN高電子移動度トランジスタ動作との相関関係

Author (5)： TANAKA Takeshi (Graduate School of Electrical and Electronics Engineering, Univ. of Fukui, JPN) ,  TANAKA Takeshi (Engineering Dept., Compound Semiconductor Products Business Unit, Cable Materials Co., Hitachi Metals, Ltd. ...) ,  SHIOJIMA Kenji (Graduate School of Electrical and Electronics Engineering, Univ. of Fukui, JPN) ,  OTOKI Yohei (Engineering Dept., Compound Semiconductor Products Business Unit, Cable Materials Co., Hitachi Metals, Ltd. ...) ,  TOKUDA Yutaka (Dep. of Electrical and Electronics Engineering, Aichi Inst. of Technol., JPN)
Material： Thin Solid Films
Volume： 557  Page： 207-211  Publication year： Apr. 30, 2014 
JST Material Number： B0899A  ISSN： 0040-6090  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *HEMT ,  compound semiconductor ,  semiconductor thin film ,  *gallium nitride ,  aluminum compound ,  gallium compound ,  *nitride ,  *carrier mobility ,  *doping ,  carbon ,  *deep level ,  deep level transient spectroscopy ,  electrostatic capacity ,  decay
Semi thesaurus term： *aluminium gallium nitride ,  electron mobility ,  大電流崩壊 ,  photocapacitance

JST classification (2)： Transistors  (NC03070N) ,  Electronic structure of impurites and defects  (BM02100I)

Terms in the title (7)： 炭素 ,  ドープ ,  GaN ,  欠陥状態 ,  AlGaN ,  高電子移動度トランジスタ ,  相関関係