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Art
J-GLOBAL ID:201402236646364340   Reference number:14A0413223

A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operation

低炭素ドープGaN層の複数の欠陥状態とそのAlGaN/GaN高電子移動度トランジスタ動作との相関関係
Author (5):
Material:
Volume: 557  Page: 207-211  Publication year: Apr. 30, 2014
JST Material Number: B0899A  ISSN: 0040-6090  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

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Category name(code) classified by JST.
Transistors  ,  Electronic structure of impurites and defects 

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