Art

J-GLOBAL ID：201402257891221676   Reference number：14A1044736

MOCVD-grown compressively strained C-doped In _x Ga_1-x As_1-y Sb _y with high-In/Sb content for very low turn-on-voltage InP-based DHBTs

超低ターンオン電圧のInP系DHBTs向けに高In含有かつ高Sb含有でMOCVD成長した圧縮歪CドープIn_xGa_1-xAs_1-ySb_y

Author (11)： HOSHI Takuya (NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN) ,  HOSHI Takuya (Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, JPN) ,  KASHIO Norihide (NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN) ,  SUGIYAMA Hiroki (NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN) ,  YOKOYAMA Haruki (NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN) ,  KURISHIMA Kenji (NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN) ,  IDA Minoru (NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN) ,  MATSUZAKI Hideaki (NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN) ,  KOHTOKU Masaki (NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN) ,  GOTOH Hideki (NTT Basic Res. Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN) ,  GOTOH Hideki (Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, JPN)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 404  Page： 172-176  Publication year： Oct. 15, 2014 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *MOCVD ,  strain ,  doping ,  *arsenide ,  *antimonide ,  *gallium compound ,  *indium compound ,  compound semiconductor ,  semiconductor thin film ,  carbon ,  heterojunction ,  *bipolar transistor ,  *voltage ,  etching ,  thermodynamics ,  band gap ,  indium phosphide ,  gain ,  cutoff frequency
Semi thesaurus term： compressive strain ,  *低ターンオン電圧 ,  turn on voltage ,  current gain ,  cutoff frequency

JST classification (1)： Transistors  (NC03070N)

Terms in the title (7)： ターンオン電圧 ,  InP ,  Sb ,  MOCVD ,  成長 ,  圧縮歪 ,  ドープ