Art

J-GLOBAL ID：201402260206078085   Reference number：14A0443216

Internal-strain effect on the valence band of strained silicon and its correlation with the bond angles

歪シリコンの価電子バンドへの内部歪の効果とその結合角との相関

Author (3)： INAOKA Takeshi (Dep. of Physics and Earth Sciences, Fac. of Sci., Univ. of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213, JPN) ,  YANAGISAWA Susumu (Dep. of Physics and Earth Sciences, Fac. of Sci., Univ. of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213, JPN) ,  KADEKAWA Yukihiro (Dep. of Physics and Earth Sciences, Fac. of Sci., Univ. of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213, JPN)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 115  Issue： 6  Page： 063702-063702-14  Publication year： Feb. 14, 2014 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *silicon ,  *valence band ,  *bond angle ,  density functional method ,  displacement (transfer) ,  compression ,  tension (material phenomenon) ,  *strain ,  *band gap ,  crystal structure ,  *internal strain ,  *strained silicon ,  atomic displacement

JST classification (2)： Electronic structure of crystalline semiconductors  (BM02060N) ,  Mechanical properties of solids in general  (BL01021C)

Terms in the title (5)： 歪シリコン ,  価電子バンド ,  内部歪 ,  結合角 ,  相関