Art

J-GLOBAL ID：201402262673160804   Reference number：14A1457908

Structural and electrical properties of CuO films and n-ZnO/p-CuO heterojunctions prepared by chemical bath deposition based technique

化学浴堆積法技術で作成したCuO膜とn-ZnO/p-CuOヘテロ接合の構造と電気特性

Author (4)： TERASAKO Tomoaki (Graduate School of Sci. & Engineering, Ehime Univ., 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, JPN) ,  MURAKAMI Toshihiro (Graduate School of Sci. & Engineering, Ehime Univ., 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, JPN) ,  HYODOU Atsushi (Fac. of Engineering, Ehime Univ., 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, JPN) ,  SHIRAKATA Sho (Graduate School of Sci. & Engineering, Ehime Univ., 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, JPN)
Material： Solar Energy Materials and Solar Cells  (Sol Energy Mater Sol Cells)
Volume： 132  Page： 74-79  Publication year： Jan. 2015 
JST Material Number： D0513C  ISSN： 0927-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *precipitation (phase separation) ,  *heterojunction ,  *copper oxide ,  *zinc oxide ,  compound semiconductor ,  semiconductor thin film ,  X-Ray Diffraction ,  scanning electron microscope ,  *electrical characteristic ,  capacitance-voltage characteristic ,  heat treatment ,  nanorod ,  particle ,  structure ,  leakage current ,  factor ,  voltage ,  interface (surface) ,  tunnel effect ,  *lattice defect ,  ratio ,  *diode ,  columnar construction ,  current density-voltage characteristics ,  ideality factor ,  threshold voltage
Semi thesaurus term： *chemical bath deposition ,  structural defect ,  rectification ratio ,  scanning electron microscope

JST classification (1)： Diodes  (NC03050R)

Terms in the title (5)： 化学浴堆積 ,  CuO ,  ZnO ,  ヘテロ接合 ,  電気特性