Art

J-GLOBAL ID：201402271211785778   Reference number：14A0413235

High-temperature isothermal capacitance transient spectroscopy study on SiN deposition damages for low-Mg-doped p-GaN Schottky diodes

低Mgドープp-GaNショットキーダイオードのSiN堆積損傷に対する高温等温容量過渡分光研究

Author (7)： SHIOJIMA Kenji (Graduate School of Engineering, Univ. of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, JPN) ,  WAKAYAMA Hisashi (Graduate School of Engineering, Univ. of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, JPN) ,  AOKI Toshichika (Graduate School of Engineering, Univ. of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, JPN) ,  KANEDA Naoki (Graduate School of Engineering, Univ. of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, JPN) ,  KANEDA Naoki (Res. and Dev. Lab., Corporate Advanced Technol. Group, Hitachi Cable Ltd., 3550 Kidamari, Tsuchiura, Ibaraki ...) ,  NOMOTO Kazuki (Dep. of Electrical Engineering, Univ. of Notre Dame, 228 Stinson Remick, Norte Dame, IN 46556, USA) ,  MISHIMA Tomoyoshi (Res. and Dev. Lab., Corporate Advanced Technol. Group, Hitachi Cable Ltd., 3550 Kidamari, Tsuchiura, Ibaraki ...)
Material： Thin Solid Films
Volume： 557  Page： 268-271  Publication year： Apr. 30, 2014 
JST Material Number： B0899A  ISSN： 0040-6090  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *Schottky barrier diode ,  *gallium nitride ,  compound semiconductor ,  plasma CVD ,  sputtered deposition ,  silicon nitride ,  *passivation ,  *doping ,  Magnesium ,  *deep level transient spectroscopy ,  *acceptor ,  surface defect ,  heat treatment ,  *film thickness ,  current-voltage characteristic ,  *modification
Semi thesaurus term： Schottky barrier diode

JST classification (2)： Diodes  (NC03050R) ,  Semiconductor thin films  (BK14040E)

Terms in the title (9)： Mg ,  ドープ ,  GaN ,  ショットキーダイオード ,  SiN ,  堆積 ,  損傷 ,  分光 ,  研究