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Art
J-GLOBAL ID:201402271211785778   Reference number:14A0413235

High-temperature isothermal capacitance transient spectroscopy study on SiN deposition damages for low-Mg-doped p-GaN Schottky diodes

低Mgドープp-GaNショットキーダイオードのSiN堆積損傷に対する高温等温容量過渡分光研究
Author (7):
Material:
Volume: 557  Page: 268-271  Publication year: Apr. 30, 2014
JST Material Number: B0899A  ISSN: 0040-6090  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

JST classification (2):
JST classification
Category name(code) classified by JST.
Diodes  ,  Semiconductor thin films 

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